Silicon thin film solar cells on glass, flexible PEN substrate and steel
Efficiency 8.8 %
Efficiency 5.6 %
Efficiency 6 %
Demonstrated 13 % efficient single sided silicon heterojunction solar cell
Schematic of siliconheterojunction solar cellActual cell fabricated
IV characteristic of the SHJ
Growth of silicon nanowires has been attempted on various substrates like glass, c-Si and SS at temperatures as low as 200oC by the HWCVP on tin templates using the VLS mechanism. A recipe has been developed to grow silicon nanowires of particular dimensions.
Silicon nanowires synthesized by HWCVP are explored as electrodes for supercapacitor application. The electrochemical properties of the in two electrode configuration were evaluated by galvanostatic charge/discharge test and cyclic voltammetry at different scan rates. A reasonable performance has been obtained with our capacitor cell with SiNWs based electrodes. A specific capacitance of 800 µF/cm2 at 10 mV/sec scan rate is obtained and the capacitive behavior is maintained even at higher scan rates. All electrochemical measurements were carried out in 1M Na2S04 aqueous electrolyte. SiNWs have been grown at low temperature which is most desirable to grow on a flexible substrate and such low temperature also minimizes the cost of fabrication. All the results indicate that SiNWs have a good scope for application in electrochemical capacitor with further optimization.
Silicon Nanowires (SiNWs) are potential building blocks for future bottom up nanoelectronic devices. SiNWs based field effect transistor have shown strong promise for them to be used in place of conventional MOSFETs.Silicon nanowire based transistors exhibit properties comparable to bulk single-crystalline devices. Silicon nanowire transistors have an either a top or back gate horizontal planar geometry. Apart from future generation MOSFETs, SiNWs FET have also been used as highly sensitive and efficient biosensors for DNA sensing. SiNWs FET based DNA sensors have been proven to be very important tool in the field of biomedical science. We have started investigating electrical transport in all HWCVD core-shell SiNWs FETs. Also, we are are trying to make Bulk SiNWs FET in bottom up approach in a facile manner without involving sophisticated equipment such as EBL or FIB.
Silicon carbon, Silicon nitride and Silicon oxide thin films have been deposited by the HWCVD technique for their applications in VLSI as dielectric films, etch stop and barrier layer.
Thin (< 10 nm) conformal films of SiC could be grown at temperature < 100oC on PR patterned substrates. 70 % conformality was achieved
